A Study of Recrystallization in Cadmium Telluride.
Abstract
Solid state recrystallization of vapor grown polycrystalline cadmium telluride (CdTe) samples was studied using a zone heating method adapted from the LESS (Lateral Epitaxy by Seeded Solidification) technique developed by J.C.C. Fan, et al at Lincoln Laboratories for silicon films. These experiments were part of an effort to produce large, twin free, single crystals of CdTe suitable for the epitaxial growth of mercury cadmium telluride compounds. Extended, high temperature annealing of CdTe samples at 800 C and 2.5 atmospheres of nitrogen revealed no changes in the grain structure. Zone heating experiments were performed on CdTe wafers and films at 850 C. Sputtered gold films were used as encapsulating layers. The samples were heated in a vacuum or in argon at atmospheric pressure with zone rates of 1.3 and 0.75 mm/sec. No recrystallization was observed but preferential epitaxy of amorphous CdTe films onto the polycrystalline substrate was noted.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1982
- Accession Number
- ADA124704
Entities
People
- Richard Bratton Snoddy
Organizations
- Air Force Institute of Technology