Effects of Surface Conditions on Carrier Transport in III-V Compounds.

Abstract

XPS (X-ray photoemission spectroscopy) measurements of surface chemistry and potential on vapor phase epitaxially grown n-type GaAs(100) and p-type bulk GaAs material are reported. Comparison of surface chemistry and potential is presented for bulk n- and p-type GaAs(100) samples. The assembly of several initial components of the contactless C-V apparatus is also described. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1980
Accession Number
ADA124764

Entities

People

  • J. R. Waldrop
  • R. W. Grant
  • S. P. Kowalczyk
  • W. A. Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Assembly
  • Chemistry
  • Contracts
  • Electrical Properties
  • Energy Bands
  • Frequency
  • Government Procurement
  • Governments
  • Instrumentation
  • Materials
  • Measurement
  • Mechanical Components
  • Micrometers
  • Surface Chemistry
  • Surface Finishing
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.