Photoluminescence Study of N-Type Thermal Conversion in Semi-Insulating GaAs.

Abstract

Chromium doped SI GaAs samples annealed at temperatures from 650 C to 950 C were examined for n-type thermal conversion. From Van der Pauw Hall measurements, it was determined that the samples annealed at 850 C, 900 C and 950 C thermally converted. These converted samples were then subjected to resistivity profile measurements to determine the extent of the thermally converted layer. Depth resolved photoluminescence was also used to observe changes in the spectra as surface layers from the converted samples were removed. Although changes in the spectra were observed, none could be related to thermal conversion. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA124772

Entities

People

  • John A. Guillen

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Band Theory Of Solids
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electrical Engineering
  • Energy Bands
  • Energy Gaps
  • Heat Treatment
  • Mass Spectrometry
  • Mass Spectroscopy
  • Measurement
  • Optics
  • Signal Processing
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene