Basic Problems in InP Technology.

Abstract

Procedures for evaluating the thermal stability of semi-insulating InP have been developed. The determination of the concentration of iron in S.I. InP and the migration of Fe during high temperature processing have been identified as a major problem. The effectiveness of plasma deposited Si3N4 and chemical vapor deposited phosphosilicate glass (PSG) as annealing encapsulants have been evaluated. PSG appears to be the encapsulant of choice at the moment.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1982
Accession Number
ADA125181

Entities

People

  • H. L. Dunlap
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Electron Mobility
  • Epitaxial Growth
  • Field Effect Transistors
  • Heat Treatment
  • Integrated Circuits
  • Mass Spectrometry
  • Measurement
  • Scattering
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene