InP Materials.

Abstract

This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1981 through 30 September 1982. A part of this support was provided by the Rome Air Development Center. The current objectives of the program are to improve the yield of high-purity polycrystalline InP as source material for crystal growth and to optimize the liquid-encapsulated Czochralski (LEC) method in order to grow crystals with low dislocation density, low residual impurity concentration and uniform dopant concentration.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1982
Accession Number
ADA125348

Entities

People

  • Gerald W. Iseler

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Coefficients
  • Convection
  • Crucibles
  • Crystal Growth
  • Crystals
  • Detectors
  • Diffraction
  • Electrical Measurement
  • Lasers
  • Measurement
  • Optical Materials
  • Radiation
  • Single Crystals
  • Temperature Gradients
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.