High Speed CCD Design.

Abstract

The use of GaAs (Gallium Arsenide) in a CCD (Charge Coupling Device) structure should provide good transfer efficiencies at clock frequencies in excess of 1GHz. These high clock speeds imply that high speed analog signal processing algorithm can be implemented which can be useful in the front ends of high speed communication systems. This effort has been designed to investigate the fabrication of planar CCDs using ion implant technology and to design and fabricate support circuitry and rf hardware necessary to drive 4 phase CCDs at clock frequencies higher than 1GHz.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1982
Accession Number
ADA125371

Entities

People

  • J. A. Higgins

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Diagrams
  • Dynamic Range
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Generators
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Pulse Generators
  • Schematic Diagrams
  • Square Waves
  • Test And Evaluation
  • Test Equipment
  • Test Fixtures
  • Waveforms

Fields of Study

  • Physics

Readers

  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Image Processing and Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics