Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces.
Abstract
The electronic structure and properties of semiconductor surfaces and interfaces as well as relevant metal and semiconductor materials have been investigated under this contract. The emphasis has been on elucidating the electronic properties of these materials and their interfaces, e.g., semiconductor-oxide and metal-oxide interfaces which are of importance in such semiconductor devices as MOSFETS, CCD devices, photovoltaic devices, etc. Extensive studies have been performed as a function of surface preparation (including laser annealing and molecular beam epitaxy) doping, thickness of adsorbed overlayers, etc. The principal techniques used have been photoelectron spectroscopy using synchrotron radiation and inverse photoemission. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1982
- Accession Number
- ADA125621
Entities
People
- Franz J. Himpsel
Organizations
- IBM Thomas J. Watson Research Center