The Mechanism of the Enhancement of Divacancy Production by Oxygen during Electron Irradiation of Silicon. II. Computer Modeling,

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Document Details

Document Type
Technical Report
Publication Date
Jul 29, 1982
Accession Number
ADA125741

Entities

People

  • A. E. Jaworowski
  • G. S. Oehrlein
  • I. Krafcsik
  • J. L. Lindstroem
  • J. W. Corbett

Organizations

  • State University of New York at Albany

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Coefficients
  • Collisions
  • Crystal Defects
  • Department Of Veterans Affairs
  • Diffusion
  • Diffusion Coefficient
  • Electron Irradiation
  • Electronics
  • Experimental Data
  • Impurities
  • Kinetics
  • New York
  • Production Rate
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Steady State

Technology Areas

  • Microelectronics