Camel Gate Field Effect Transistors.

Abstract

An alternative field effect transistor (FET) structure to the junction FET (JFET) and the metal-semiconductor FET (MESFET), the camel gate FET (CAMFET), is described. This device uses the voltage-variable depletion width of a camel disode for modulating the channel current. By varying the structural parameters of the CAMET, a wide variety of FET characteristics may be obtained. CAMFETSs can be designed to yield relatively voltage independent transconductances, large for ward turn-on voltages, and large gate-drain breakdown voltages, all of which are desirable in large signal applications. CAMFETs with large transconductances. desirable in logic applications, may also be obtained. Together with ease of fabrication and potentially improved reliabilities and yields, the many advantagesof CAMFETs appear to point to a promising future in both discrete and large scale integrated circuit applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1983
Accession Number
ADA125942

Entities

People

  • Robert Edward Thorne

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conduction Bands
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Logic Gates
  • Metal-Semiconductor Junctions
  • P-N Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Parasitology and Pharmacology of Malaria.

Technology Areas

  • Microelectronics