The Surface Structure, Scattering Losses and Schottky Barrier Model of III-V Compound Semiconductors.
Abstract
The surface atomic structure of GaP (110) has been determined by low energy electron diffraction (LEED) analysis, which was done via direct comparison of LEED intersities calculated using dynamical (multiple-scattering) programs with experimental data measured at room temperature. The final best-fit structure whereas the Ga atoms are rotated inwards from the plane by an angle of 27 deg. Further, the outmost interlayer spacing contracts by 5%. A metal-amorphous film-semiconductor (MAS) configuration is suggested to be the physical model of a real Schottky-barrier structure. Based on the MAS model, the origin of Fermi-level pinning, the deviation of the diode ideality factor from its unity value and the transition of interface electronic behavior between covalent and ionic semiconductors have been discussed. Laser scattering techniques was utilized to investigate the surface scattering losses of GaAs waveguides. The result shows that the degrees of surface roughness are proportional to the grit size used to polish the substrate surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 21, 1982
- Accession Number
- ADA126445
Entities
People
- Bansang W. Lee
Organizations
- Rutgers School of Engineering