Interface States and Electron Spin Resonance Centers in Thermally Oxidized (111) and (100) Silicon Wafers
Abstract
Interface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR P sub b signal, previously assigned to interface Si---Si3 defects on (111) wafers, was found to have two components on (100): an Si---Si2O. The quantitative proportionality of P sub b spin concentration to midgap interface trap density D sub it is maintained on (100), and both are lower by a factor of about 3 compared to (111). This correlation persists over the range of oxidation temperatures 800-1200 deg C, for both n- and p-doped silicon, cooled by fast pull in oxygen, and cooled or annealed in nitrogen or argon. The correlation is independent of doping level. In samples with different oxide thickness, neither P sub b nor D sub it varied significantly over the range 100-2000 A, but P sub b was smaller at 50 A. In general, ESR is judged to offer promise for further studies of specific interface features.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1981
- Accession Number
- ADA126719
Entities
People
- Bruce E. Deal
- Edward H. Poindexter
- Philip J. Caplan
- Reda R. Razouk