HgCdTe Fabrication Using Directed Energy Techniques
Abstract
The goal of this research was to produce large-area, thin-film single-crystal HgCdTe material for infrared detectors. Single-crystal CdTe films were deposited by heteroepitaxial evaporation on muscovite mica substrates, and subsequently converted to single-crystal Hg(1-x) Cd(x) Te by vapor exchange at a constant temperature. These films had excellent stoichiometry, uniform composition, and good electrical properties; however, the films were not useful on the mica substrates nor were they successfully transferred to other substrates. Attempts at depositing single-crystal CdTe films on sapphire, BaF2' zirconia, and quartz were unsuccessful. Attempts to grow single-crystal CdTe films on sapphire by liquid-phase epitaxy using pulsed electron beams to melt thin deposited films were also unsuccessful. It is believed that the goals of this program could be met by a different evaporation furnance design which would allow in situ cleaning of the substrate surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1983
- Accession Number
- ADA126910
Entities
People
- Anton C. Greenwald
- Robert G. Wolfson