New Indium Phosphide Sources

Abstract

The Indium Phosphide (InP) Gunn device is fast becoming a key component in the millimeter wave region. The device has superior performance as wideband low noise amplifier, low noise local oscillator, self-oscillating mixer, and low to medium power source. Its development and advances are primarily fueled by military systems requirements and developments covering missile and projectile guidance, high resolution radar systems, intercept secure communications and EW and ECM functions. In this paper an overview of the current status of indium phosphide Gunn device development and future trends is presented. Covered will be in particular key parameters leading to indium phosphide's advantage at millimeter-wave frequencies, recent material and device developments, oscillators, amplifiers and systems applications with emphasis on current capabilities. Other devices such as InP, FET, and InP IMPATT devices are not considered in this paper because of their current limitations to microwave frequencies.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA127103

Entities

People

  • L. Wandinger

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Amplifiers
  • Diffusion Coefficient
  • Electric Fields
  • Electronics Laboratories
  • Energy
  • Fabrication
  • Frequency
  • Frequency Bands
  • Heat Sinks
  • Low Noise
  • Materials
  • Millimeter Waves
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Thermal Conductivity
  • Thermal Resistance

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Sensor Fusion and Tracking Systems.

Technology Areas

  • 5G
  • 5G - DoD 5G Program
  • 5G - Internet of Things