Deep Level Defects in Semiconductors.

Abstract

Using Racah's irreducible tensor operator formalism, a generalized and more refined treatment of the d-electron matrices for transition metal defects in crystals has been given. The resulting Coulomb and exchange interaction matrices have been used to calculate the electronic structures of GaAs:(2+)Cr(2+) and GaAs:Cr(3+) and interpret the optical data on MgF2:Co(2+) and MgF2:Mn(2+). The significance of the new theory is explained. From the photoluminescence and optical absorption data, the crystal field parameters have been derived. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1980
Accession Number
ADA127229

Entities

People

  • R. R. Sharma
  • S. Sundaram

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Calorific Value
  • Charge Transfer
  • Color Centers
  • Crystal Structure
  • Electron Electron Interactions
  • Energy Bands
  • Energy Levels
  • Experimental Data
  • Low Temperature
  • Materials
  • New York
  • Optical Absorption
  • Optical Properties
  • Quantum Properties
  • Solid State Physics
  • Spectra
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Linear Algebra
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene