Prediction of Transverse-Mode Selection in Double Heterojunction Lasers by An Amipolar Excess Carrier Diffusion Solution

Abstract

Transverse-mode selection is characterized for GaAs/AlGaAs double heterojunction lasers from optical field and elcetron/hole interaction. The electron/hole distribution determined from a solution of the ambipolar diffusion equation provides the necessary information about gain/mode coupling to predict the current at threshold. Lasing power out versus current solutions provide information about internal differential quantum efficiency. Theory is matched to experiment for a multimode laser with one heterojunction having a very small index step. It is found that the laser's characteristics over a temperature and current range are predicted by adjusting the active-layer refractive index as determined from far-field measurements.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1983
Accession Number
ADA127238

Entities

People

  • Jerome K. Butler
  • Joseph B. Delaney
  • Richard R. Shurtz Ii

Organizations

  • Southern Methodist University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Coefficients
  • Couplings
  • Current Density
  • Efficiency
  • Eigenvalues
  • Far Field
  • Fermi Levels
  • Geometry
  • Lasers
  • Materials
  • Measurement
  • Near Field
  • Quantum Efficiency
  • Refractive Index
  • Semiconductors
  • Standards
  • Waveguides

Fields of Study

  • Physics

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing