Fabricate Indium-Antimonide Two-Dimensional Charge Injection Device Array.

Abstract

The objective of this program was to fabricate 16x64 two-dimensional InSb CID arrays using the process sequence developed by GE CR&D under contract N00173-80-C-0281. This process sequences does not involve a thick-thin cut back of the pixel gate oxide and therefore produces an essentially planar structure. InSb CID focal plane arrays with 16x64 elements have been fabricated and various 2-D CID modes demonstrated on test structures incorporated on the chips. Low threshold voltages, low density of states in the interfaces and in the gate oxides and dual-gate coupling between row and column gates of less than one volt have led to the demonstration of practical ideal mode behavior. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1982
Accession Number
ADA127638

Entities

People

  • C.-y. Wei
  • H. H. Woodbury

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Arrays
  • Capacitance
  • Capacitors
  • Charge Transfer
  • Chemical Vapor Deposition
  • Contracts
  • Couplings
  • Elements
  • Fabrication
  • Geometry
  • Indium Antimonides
  • Linear Arrays
  • Low Density
  • Security
  • Thickness
  • Two Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Structural Dynamics.