Optical Detection of Electron Spin Resonance in Compound Semiconductors.
Abstract
The electronic structures of defects and impurities in GaSe-S alloys, GaAs:Cr, GaAs: Zn, ColTe and Si/Si02 have been investigated using the techniques of optically detected magnetic resonance (ODMR) and spin sensitive photoconductivity (SSP). In GaSe-S the ODMR has been used to study a wide range of triplet states. The photoluminescence bands associated with triplet state deexcitation change linearly with composition. The g-values of the triplet state ODMR as well as the crystal field splitting parameter also change linearly with alloy composition. Similiar work on GaAs: Cr shows that the ODMR and SSP spectra are not associated with internal transitions of the ST2 state of the Cr2+ ion in GaAs. At least two spin triplet state resonances are observed due to electron-hole recombination at CR2+ ions in distorted Ga3+ sites. The ODMR results for GaAs:Zn are interpreted as recombination luminescence at substitutional Zn2+ impurity ions with distortion axis along a (III) axis. In CdTe resonances observed with g-values of 1.61 and 1.35 have been identified as due to electrons recombining at neutral acceptors (or donors) and holes recombining at neutron donors respectively.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1982
- Accession Number
- ADA127686
Entities
People
- Brian Henderson
Organizations
- Trinity College Dublin