Development of Indium-Antimonide Two-Dimensional Charge-Injection Device Array with Complete Charge Transfer.
Abstract
A 'non-etch-back' fabrication technique has been developed for an InSb two-dimensional infrared sensitive charge injection device. This report summarizes the first phase of a two phase program and describes the fabrication technique and test results on a set of experimental configurations. The performance objectives relating to lag, well capacity, and charge transfer have been met. The second phase of this program has been initiated which is to fabricate the 16 x 64 2-D CID arrays. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1982
- Accession Number
- ADA127716
Entities
People
- C.-y. Wei
- H. H. Woodbury
Organizations
- General Electric