Development of Indium-Antimonide Two-Dimensional Charge-Injection Device Array with Complete Charge Transfer.

Abstract

A 'non-etch-back' fabrication technique has been developed for an InSb two-dimensional infrared sensitive charge injection device. This report summarizes the first phase of a two phase program and describes the fabrication technique and test results on a set of experimental configurations. The performance objectives relating to lag, well capacity, and charge transfer have been met. The second phase of this program has been initiated which is to fabricate the 16 x 64 2-D CID arrays. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1982
Accession Number
ADA127716

Entities

People

  • C.-y. Wei
  • H. H. Woodbury

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Abstracts
  • Arrays
  • Bias
  • Capacitance
  • Capacitors
  • Charge Transfer
  • Chemical Vapor Deposition
  • Detectors
  • Fabrication
  • Geometry
  • Indium Antimonides
  • Linear Arrays
  • Measurement
  • Oxide Films
  • Sequences
  • Substrates
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology
  • Software Engineering