Verify and Extend VLSI Device Models
Abstract
The objective of the contract were to develop circuit simulation models for SPICE for 1-micron geometry and study the physics of MOS devices to find extensions needed to develop circuit simulation models for submicrometer and SOI devices. The tasks in the program were: Task 1 - Fabricate and extensively characterize short-channel (1- to 5-micron) MOSFETs to develop a model; Task 2 - Install and verify the Standford University process device programs; Task 3 - Model Verification; and Task 4-Extension of MOSFET Model to Submicrometer and SOI Devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1982
- Accession Number
- ADA128141
Entities
People
- J. Leiss
- P. Chatterjee
- Pei Yang
- S. Malhi
- S. Shichijo
Organizations
- Texas Instruments