Luminescence and Electrical Characterization of Ion Implanted Si:Tl.
Abstract
Ion implanted Si:Tl was characterized by luminescence, Hall-effect, Rutherford Backscattering (RBS), and Secondary Ion Mass Spectrometry (SIMS). This is the first reported luminescence study of an implanted dopant in silicon. The same sharp line defects were produced by the Tl heavy ion implants as identified in previous light ion studies. The defects produced by the ion implantation were removed and the Tl activated by a two-step anneal procedure. A high quality annealed implant layer was produced from which the four excited states of the Tl bound exciton no-phonon could be resolved. An unidentified bound exciton peak related to the Tl acceptor was observed for the first time in both ion implanted and bulk grown Si:Tl. Temperature dependent Hall-effect measurements were made on the implant layers which indicate that Hall-effect measurements made only at room temperature are not valid in general for silicon implant layers. The Hall data and luminescence data both indicate that the concentration of activated Tl increases with increasing second anneal temperature. The Hall-mobility varied as T-2.4 for implanted Si:Tl in the temperature range 135-165K. The ionization energy was determined to be 229 meV by Hall-effect measurements in the compensated temperature region.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1982
- Accession Number
- ADA128417
Entities
People
- Orven F. Swenson
Organizations
- Air Force Institute of Technology