Ion Implant Damage Regrowth and Characterization
Abstract
Three cross section transmission electron microscope (XTEM) micrographs show the development of crystal damage as a function of implantation fluence for 300 keV silver (Ag) implanted into Si. A fourth XTEM micrograph shows the depth distribution of defects for the 10 to the 15th power/sq cm fluence annealed at 800 C that shows a buried defect layer and a surface damage layer. The depth distribution of Ag atoms measured by secondary ion mass spectrometry (SIMS) shows that the Ag atoms are located in these same two regions, demonstrating that the residual Ag atoms are complexed with the defect structure in annealed implanted Si. The XTEM micrograph for the 10 to the 14th power/sq cm implant fluence shows a buried amorphous region with what appears to be a high density of microcrystallites within the amorphous layer. This structure is very interesting and we wish to study the origin and change within this layer with further annealing of these microcrystallites. These results favor the formation of an amorphous layer as the result of the overlapping of indivdual damage clusters, rather than from the accumulation of a critical density of point defects before crystalline Si transforms into the amorphous state.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1982
- Accession Number
- ADA128694
Entities
People
- R. G. Wilson
Organizations
- HRL Laboratories