Ion Implant Damage Regrowth and Characterization, and Depth Distribution of Defects and Impurities in Proton-Implanted GaAs

Abstract

Cr and 0 together have been implanted into damaged (amorphised) and crystalline GaAs and annealed some of the material at 830 degrees C for 20 min. Annealed and unannealed samples have been SIMS profiled for Cr and for O. All are now being analyzed by TEM by Sadana at UC Berkeley. When the TEM results are available, the work will be reported.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1982
Accession Number
ADA128695

Entities

People

  • R. G. Wilson

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alpha Particles
  • Depth
  • Detection
  • Diffusion
  • Dynamic Range
  • Implantation
  • Materials
  • Measurement
  • Shallow Depth

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.