High Sensitivity Optical, Modulated Optical and Raman Investigation of GaAs and Its Oxides.
Abstract
The original purpose of this research program was to investigate the anodic oxidation process in GaAs utilizing sensitive optical techniques. The nature of surfaces in the preparation of semiconductor devices has been a concern of long standing. In particular, the increasingly important role played by GaAs in the fabrication of semiconductor devices suggested the need for a more fundamental understanding of its surfaces. Recently, considerable interest has been shown towards oxidation from the viewpoint of application of surface passivation, planar technology and fabrication of MOS field effect transistors. One initial study of the anodic oxidation process in GaAs led to a broader investigation of the properties of the semiconductor-electrolyte interface. In particular, we found new applications of electrolyte electroreflectance (ERR) to gain information about this important interface. This work has led to the development of EER as a technique to study surfac potential distribution (including flat-band and Fermi-level pinning), optical determination of electrical properties, etc. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADA128703
Entities
People
- F. H. Pollak
Organizations
- Brooklyn College