Plasma-Enhanced Deposition and Processing of Transition Metal Silicides.

Abstract

Radiofrequency (rf) discharges of tungsten hexafluoxide/hydrogen or molybdenum/hexafluoride/hydrogen have been used to deposit films of tungsten or molybdenum. The tungsten depositions resulted in high purity films with as-deposited resistivities ranging from 40 to 170 micron omega cm, depending upon the deposition conditions. Short (<20 min) heat treatments in hydrogen/nitrogen atmospheres at temperatures above 700 deg C resulted in a decrease in the resistivity of the films to approximately 8 micron omega-cm, essentially independent of the initial film resistivity. Unlike tungsten, molybdenum films displayed high (>10,000 micron omega cm) resistivities. These results were due to approximately 15 atomic percent fluorine incorporated into the film structure during deposition. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1983
Accession Number
ADA128817

Entities

People

  • Dennis W. Hess

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Electrical Properties
  • Films
  • Geometry
  • Grain Size
  • Heat Energy
  • Heat Treatment
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Metals
  • Oxides
  • Refractory Metals
  • Resistance
  • Transition Metals
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.