Development and Application of SIMS (Secondary Ion Mass Spectrometry) Characterization Techniques for the Study of Impurities and Impurity Motion in HgCdTe and CdTe

Abstract

The broad objectives of this program are to develop quantitative analytical procedures for the application of high performance Secondary Ion Mass Spectrometry (SIMS) to the analysis of CdTe and (HgCd)Te for trace element and major constituent characterization, particularly Hg, and to perform materials- directed research in order to better understand the incorporation and redistribution of impurity elements in CdTe and (HgCd)Te.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1983
Accession Number
ADA129223

Entities

People

  • Charles A. Evans Jr.

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Current Density
  • Data Acquisition
  • Detectors
  • Elements
  • Energy
  • Ion Bombardment
  • Ion Implantation
  • Kinetic Energy
  • Mass Number
  • Mass Spectra
  • Mass Spectrometry
  • Materials
  • Spectra
  • Spectrometers
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.