1.27 Micrometers Receiver Development.
Abstract
This program addressed performance improvements of GaA1AsSb avalanche photo-diodes and low noise GaAs MESFET transimpedance amplifier for 1.3 micron fiber optic hybrid receiver applications. Although material non-uniformity and device surface leakage problems require further work, GaA1AsSb is a most attractive lattice-matched 1.3 to 1.55 micron APD material with high gains, quantum efficiencies, and speeds exhibited in a variety of device structures. The GaAs monolithic preamplifier investigated in the program, capable of frequency operation is excess of 1 GHz with appropriate transimpedance, is an ideal front end for a fiber optic communication receiver or an APD array. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1983
- Accession Number
- ADA129277
Entities
People
- H. D. Law
- K. Nakano
- P. D. Dapkus