Monolithic Gallium Arsenide Superheterodyne Front End.

Abstract

This final report describes the work performed under ONR Contract NO. N00014-78-C-0624. The goal of the program was to develop GaAs monolithic microwave integrated circuitry (MMICs) for an 8 GHz superheterodyne receiver front end. The MMIC designs are based on microstrip circuitry fabricated on semi-insulating GaAs substrates with resistivity as high as 10 to the 9th power ohms/sq cm. single and two stage low noise amplifiers were successfully developed. An IF ampmlifler design was successful, initial results were also obtained on a monolithic mixer and voltage controlled oscillator.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1982
Accession Number
ADA129372

Entities

People

  • Anu Gupta
  • D. R. Decker
  • W. C. Petersen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Ceramic Materials
  • Circuit Analysis
  • Fabrication
  • Field Effect Transistors
  • Gallium Arsenides
  • Integrated Circuits
  • Intermediate Frequencies
  • Intermediate Frequency Amplifiers
  • Ion Implantation
  • Local Oscillators
  • Low Noise
  • Low Noise Amplifiers
  • Metal-Semiconductor Junctions
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics