Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor (MOS) Devices

Abstract

The enclosed paper discuss the trapped hole location and annihilation in Si, current and C-V instabilities in Si02 at high fields, annealing of neutral electron traps in irradiated oxides, A1 implanted into the Si02 layer of MOS structures, electron trapping as a result of A1 implanation, the initial oxidation regime of silicon oxidation and the electronic structure of Si02, SixGe1-x02, Ge02.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1977
Accession Number
ADA129601

Entities

People

  • D. J. Dimaria
  • D. R. Young
  • J. M. Aitken
  • R. Pollak
  • T. Distefano

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Theory Of Solids
  • Computer Programs
  • Crystal Structure
  • Current Density
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Ionizing Radiation
  • Materials
  • Materials Science
  • Measurement
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene