Novel Transport and Recombination Processes in Semiconductors.
Abstract
This report contains descriptions of our work on two dimensional transport in Si and InP devices and spin dependent recombination in Si gate controlled p-n junctions. The two dimensional work covers our investigations of the quantum Hall effect where we find that the effect is basically d.c. and can be measured by the application of a finite frequency. The cause of this effect is discussed in terms of a delocalisation of electrons in the trials of Landau levels. The experiments indicate that localisation in the tails of Landau levels is caused by both disorder and the electron-interaction. Another aspect of the electron-electron interaction which has been investigated is the oscillatory conductance in inversion layers when charge is present at the Si-Si02 interface. It is suggested that Coulomb effects give rise to a contribution to the activation energy which oscillates with carrier concentration. Other topics in two dimensions which are discussed include the role of spin-orbit coupling in transport in the InP inversion layer and an investigation of the scaling theory of conduction.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1983
- Accession Number
- ADA130674
Entities
People
- M. Pepper
Organizations
- University of Cambridge