Electronic Properties of Semiconductor Interfaces.

Abstract

The objective was to analyze the electronic properties of different semiconductor interfaces. The Wannier function formalism has been applied to the GaAs-AlAs (111) and (100) heterojunctions and superlattices. Ionic relaxations, band discontinuities and interface states have been obtained. Abrupt Si-metal interfaces and Si-interlayer-metal junctions have been analyzed by means of a selfconsistent tight-binding approach. The barrier height has been obtained by calculating the interface density of states and the neutral level of the junction. Our results show that the barrier height is mainly determined by the coupling between the semiconductor and the last layer just sitting on top of the same semiconductor. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1983
Accession Number
ADA130745

Entities

People

  • C. Tejedor
  • F. Flores
  • F. Guinea
  • Jose Sanchez-Dehesa

Organizations

  • Autonomous University of Madrid

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Charge Density
  • Chemical Compounds
  • Conduction Bands
  • Consistency
  • D Band
  • Electron Density
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Free Energy
  • Metal-Semiconductor Junctions
  • Semiconductor Junctions
  • Semiconductors
  • Three Dimensional
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene