Study of Deep-Level Defects and Transport Properties vs Growth Parameters and Annealing Conditions in III-V Compound Semiconductors.
Abstract
The objectives of this research program are: (1) To investigate the grown-in defects and the effects of thermal and laser annealing on the grown-in defects in LEC grown Zn-doped InP, (2) to study the transport properties in n-type InP, (3) to characterize the grown-in defects vs annealing temperature in the LEC grown GaAs, and compare the deep-level defects in the MOCVD grown GaAs on semi-insulating GaAs- and Ge- substrates, (4) to study the one-MeV electron radiation induced deep level defects in LPE grown GaAs and the effects of thermal annealing on these defects. Deep-level Transient Spectroscopy (DLTS) Capacitance-Voltage (C-V), Current-Voltage (I-V), Resistivity, and Hall effect measurements were employed to study the deep-level defects and transport properties vs growth parameters and annealing conditions in GaAs and InP specimens. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1983
- Accession Number
- ADA130776
Entities
People
- Shengsan Li
Organizations
- University of Florida