Laser Chemical Etching of Vias in GaAs.
Abstract
Rapid drilling of vias in thick wafers (381 micons) of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1983
- Accession Number
- ADA131288
Entities
People
- Armin W. Tucker
- Milton Birnbaum
Organizations
- The Aerospace Corporation