Semiconductor Surface Characterization Using Transverse Acoustoelectric Voltage versus Voltage Measurements.

Abstract

An alternative to Capacitance-Voltage (C-V) measurement is experimentally demonstrated. This technique measures the Transverse Acoustoelectric Voltage (TAV) as a function of applied D.C. voltage across the semiconductor. The technique is nondestructive and is applied to uniformly doped Si samples. Surface properties such as the flat band voltage, oxide charge and the zero bias surface condition are determined. P.S. An annual interim report is being accepted as the Final report for AFOSR-77-3426. The technical effort is being continued for one year under AFOSR-82-0281. The Final report for this continuation will contain more overall detail and should be considered as the final report for the entire technical effort. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1982
Accession Number
ADA131347

Entities

People

  • B. Davari
  • Pankaj K. Das

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Acoustic Waves
  • Compound Semiconductors
  • Electrical Properties
  • Electronics
  • Gallium
  • Gallium Arsenides
  • Measurement
  • Physical Properties
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Spectroscopy
  • Surface Acoustic Wave Devices
  • Surface Acoustic Waves
  • Surface Properties
  • Waves

Readers

  • Electrical Engineering
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics