Reliability Analysis of the Gradual Degradation of Semiconductor Devices.

Abstract

A review of the recent results on accelerated aging of both power and low-noise GaAs FETs indicates that the major failure mode occurs by gradual deterioration and not by the usually (implicity) assumed catastrophic device failure. It is shown that assuming catastrophic degradation when devices actually fail gradually can lead to incorrect device reliability predictions. The analysis of accelerated aging results for a gradual degradation failure mode is indicated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 20, 1983
Accession Number
ADA131375

Entities

People

  • Michael F. Millea

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Data Science
  • Decision Theory
  • Electronics
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Heat Of Activation
  • Information Science
  • Life Tests
  • Low Noise
  • Power Gain
  • Probability
  • Reliability
  • Semiconductor Devices
  • Semiconductors
  • Statistical Decision Theory

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics