A Program of Research on Microfabrication Techniques for VLSI Magnetic Devices.
Abstract
Means of fabricating, selectively modifying, and characterizing single crystal epitaxial garnet and amorphous magnetic thin films are being investigated with the intention of developing new materials and processes for magnetic devices including bubble, recording, magneto-optic, and micro-wave devices. Submicron ion unimplantable garnets have been developed for ion-implanted contiguous disk devices. A wideband ferromagnetic resonance spectrometer and a high resolution magneto-optic photometer were developed and used to measure the magneto-striction and crystalline anisotropy constants of these materials. It was found that ion implantation dramatically reduces the crystalline anisotropy field and that a large portion of the change in uniaxial anisotropy of garnets is produced by non-stress related mechanisms which became more important as bubble size is reduced. Transmission electron microscopy investigations of ion implanted garnets have revealed clearly observable changes in stress and structure produced by implantation. Amorphous magnetic materials have been developed which support submicrometer sized domains for bubble and magneto-optic device applications. A number of high density bubble devices have been designed and fabricated: 2-4 micrometers period ion-implanted contiguous disk devices, 4-8 micrometer period current-acessed devices, and 2-6 micrometer period current-accessed ion implanted devices with 4 to 16 times lower power dissipation than earlier current-accessed devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1982
- Accession Number
- ADA131706
Entities
People
- Aidee Guzman
- C. L. Bauer
- J. A. Rayne
- M. H. Kryder
Organizations
- Carnegie Mellon University