Surface and Interfacial Properties of Ga(0.47)In(0.53)As Alloys.

Abstract

High frequency C-V measurements and quasi-static gate-controlled galvanomagnetic measurements have confirmed theoretical predictions that the surface Fermi level of Ga0.47In0.53As is pinned by lattice defect-related surface states at approximately 0.55 eV above the valence band edge. The total dnesity of the donor and acceptor centers, related to these defects, is two to three orders smaller than those of InP and the respective barrier heights of n and p-type Ga0.47In0.53As-metal contacts are consistent with the equilibrium surface Fermi level of A1203 as well as other dielectric-Ga0.47In0.53As interfaces. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1983
Accession Number
ADA131925

Entities

People

  • H. H. Wieder

Organizations

  • University of California, San Diego

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conduction Bands
  • Crystal Lattices
  • Electrical Engineering
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Field Effect Transistors
  • Low Temperature
  • Materials
  • Semiconductors
  • Surface Properties
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology