Fabrication and Properties of Multilayer Structures
Abstract
The purpose of the work presented in this paper was to develop the reactive sputtering synthesis process so that continuous layers of controllable structure and composition could be formed in a reproduceable and routine manner. Refractory oxides were chosen as the class of materials to be studied. In this paper we report the results of our studies on the reactive deposition of the oxides of silicon (SiOX). Films of SiOX (0 < x < 2) were synthesized at high rates onto substrates held at room temperature. A systematic investigation of the structure-composition-synthesis process variables was conducted for this system and it was clearly demonstrated that films of controllable stoichiometry, varying over the range Si0.1 to Si02, (Ts approx < 65 deg C). The low temperature nature of this process is a unique feature of high industrial potential as it provides a method for forming SiOX passivating films that does not include time-temperature cycling that could degrade existing device structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1983
- Accession Number
- ADA131934
Entities
People
- Lynn Nagel
- Troy W. Barbee Jr.
- W. Dibble
- William A. Tiller
- Y. T. Thathachar
Organizations
- Stanford University