Numerical Modeling of the MOSBJT.

Abstract

A totally merged MOSFET and BJT has been proposed. The device exhibits complicated-non-linear characteristics under certain operating conditions. Due to the distributed character of this novel merged device, a straightforward lumped device approach is not adequate. A distributed model is proposed and analyzed using numerical techniques. The active device area is shown to be affected by bias and contributes to the non-linear character of the characteristics under suitable conditions. Several gate shapes are treated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1983
Accession Number
ADA132351

Entities

People

  • David Okada
  • James W. Holm-kennedy

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  • University of Hawaiʻi at Mānoa

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  • Bipolar Junction Transistors
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