The BJT-JFET, A Novel Merged Device Structure.

Abstract

A novel semiconductor device, the BJT-JFET, is described. The fabrication of the device is described and the device characteristics are explained in terms of the fully merged nature of the device and the self-biasing effects of the distributed collector current on the collector/channel base bias. A simple analytical model is developed. The results are consistent with the conceptual understanding of the operation of the device. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1983
Accession Number
ADA132373

Entities

People

  • James W. Holm-kennedy
  • Leng-seow Tan

Organizations

  • University of Hawaiʻi at Mānoa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Computer Programs
  • Computers
  • Current Density
  • Electrical Engineering
  • Electronics Laboratories
  • Energy Bands
  • Engineering
  • Equations
  • Field Effect Transistors
  • New York
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • United States
  • Universities

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics