X-Ray and Backscattering Analysis of Ion Implantation Phenomena in GaAs and Related Compounds
Abstract
It is well-known that amorphous GaAs layers produced by ion implantation behave differently upon thermal annealing from amorphized layers of Si or Ge. The special features of GaAs include non-linear regrowth with time, poor epitaxy at low temperatures, and the necessity of high annealing temperatures for electrical activation. Whilst many models have been proposed, the reasons for these differences are unclear. Double crystal x-ray diffractrometry, interpreted with a model of kinematic diffraction is a new tool which can give accurate information about strain and damage in imperfect crystalline films. It may therefore yeild information about structural characteristics that may explain these differences. The present is for a study of implantation and annealing in GaAs and other materials by this technique, as well as by backscattering spectrometry (BSS).
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 04, 1983
- Accession Number
- ADA132429
Entities
People
- M. A. Nicolet
- T. Vreeland Jr.
Organizations
- California Institute of Technology