A Rectangular Gate Merged MOSBJT.

Abstract

The design, fabrication, and device characteristics of a rectangular gate MOSBJT are described. The characteristics are explained in terms of the merged character of the device and the self-biasing effects of the distributed collector current on the collector channel/base bias. For sufficiently high collector currents a portion of the collector channel is self-biased resulting in a decreased beta. The active area of the device is then controlled by the device operating bias. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1983
Accession Number
ADA132450

Entities

People

  • David Okada
  • James W. Holm-kennedy

Organizations

  • University of Hawaiʻi at Mānoa

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Accumulators
  • Bipolar Junction Transistors
  • Charge Density
  • Chlorine
  • Chlorine Compounds
  • Diffusion
  • Electrical Engineering
  • Electrons
  • Engineering
  • Fabrication
  • Inversion
  • Laminar Flow
  • Oxides
  • Personality
  • Substrates
  • Universities

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.