Donor Behavior in High-Purity Epitaxial InP.
Abstract
The paper presents the results of research undertaken to develop a technology for the improved growth of high-purity, epitaxial InP using the H2-In-PC13 process. A VPE reactor was fabricated and a general reactor model was developed. Based upon early growth runs and application of the reactor model, modifications were made in the standard growth procedures to obtain much higher purity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 02, 1980
- Accession Number
- ADA132571
Entities
People
- C. M. Wolfe
- R. T. Green
Organizations
- University of Washington