Investigation of Ion Energy Deposition in Solids
Abstract
A combined theoretical and experimental study of primary recoil spectra effects or radiation damage in silicon is presented. Calculations determined how the damage energy is partitioned into free defects and cascades by fast collisions. The theory also showed that on a time scale about 10 to the minus 14th power sec, a very weak mass dependence of the lattice damage is to be expected. Channeling experiments were then performed on 111 single crystal silicon implanted with 1.0 MeV (20)Ne, 0.5 MeV (4)He, and 75 keV (1)H. Energies and fluences of the ions were matched such that over the first 0.3 micrometers, the damage energy deposited and the rate of energy deposition were the same for all species. The experimental date were analyzed assuming that equivalent primary damage states will evolve into statistically equivalent final damage states at high fluences. They confirm that the final damage is essentially independent of the mass of the bombarding ion.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 16, 1982
- Accession Number
- ADA132980
Entities
People
- J. A. Spitznagel
- R. M. Moore
- W. J. Choyke