Fiber Optic Light Emitting Diode.
Abstract
Optimum conditions for the growth of lattice-matched double heterostructures from two material systems, GaInAsP/InP and GaAlAsSb/GaSb, are described. The quantum efficiency and power output of surface-emitting L.E.D.'s (1.3 micrometer and 1.55 micrometer) fabricated from both material systems are given. A model relating the fraction of injected electrons to the separation between the direct and indirect conduction band minima is used to explain the low quantum efficiency observed for the GaAlAsSb/GaSb L.E.D.'s. The spectral width, near and far field of typical 1.3 micrometer GaInAsP/InP L.E.D.'s were measured. Finally, the modulation bandwidth and coupling efficiency of a packaged device into an optical fiber with a numerical aperture of 0.2 are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1980
- Accession Number
- ADA133363
Entities
People
- H. D. Law
- P. D. Dapkus
- Weiwen Ng