Study of Phase Diagrams of Ternary Semiconductors.

Abstract

In this three-year project on the theoretical studies of Hg-Cd-Te phase diagram, the liquidus and solidus have been calculated using the conditions to thermal coexistence of the liquid and solid. The pair approximation of the cluster variation method is used throughout, and the energy parameters are always treated as independent of temperature and composition. The lattice defects in the solid are neglected in the first treatment. By choosing energy parameters, it is possilbe to make the theroretical liquidus and solidus agree reasonably well with experiments. In the later formulation, lattice vacancies and antiatoms are taken into account. Then the theory shows that the temperature dependence of Hg vacancies is the same as that of holes in the valence band. The relation between the hole concentration and the partial pressure of Hg can also be derived with good agreement with experience.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1983
Accession Number
ADA133556

Entities

People

  • R. Kikuchi

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Energy
  • Equations
  • Experimental Data
  • Free Energy
  • Geometry
  • Lepidoptera
  • Liquid Phases
  • Materials
  • Partial Pressure
  • Phase Diagrams
  • Phase Separation
  • Probability
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene