Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices
Abstract
The papers enclosed with this report include: a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SIO2 films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1983
- Accession Number
- ADA133674
Entities
People
- C. Aliotta
- D. J. Dimaria
- D. R. Young
- J. Blum
- S. D. Brorson
Organizations
- IBM Thomas J. Watson Research Center