Statistical Simulation of GaAs MESFETS.

Abstract

A method has been developed for the statistical simulation of gallium arsenide metal semiconductor field effect transistors. Simulated device parameter distributions were compared with measured parameter distributions using the Kolmogorov-Smirnov test. By adjusting the individual input parameter in a trial and error process, an acceptable simulation was obtained for the parameter distributions of five different devices. The correlation coefficients between device parameters produced in the simulation were acceptable except for one parameter. A set of equations was derived for computing the parameters of the Curtice GaAs MESFET model in terms of six standard measured device parameters. A comparison of simulated and measured Curtice model parameters for the five devices did not indicate an acceptable match. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 29, 1983
Accession Number
ADA133923

Entities

People

  • Arthur R. Thorbjornsen

Organizations

  • University of Toledo

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuit Analysis
  • Circuits
  • Computational Science
  • Computer Programs
  • Electron Mobility
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Materials
  • Mathematical Models
  • Normal Distribution
  • Semiconductor Manufacturing
  • Semiconductors
  • Simulations
  • Statistical Tests

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Statistical inference.

Technology Areas

  • Microelectronics