Studies of the Electronic Properties of Two-Dimensionally Confined Carriers in MIS (Metal-Insulator-Semiconductor) Inversion/Accumulation Layers, Heterojunctions and Quantum Wells.

Abstract

This report states the results of several investigations of the one and many electron transport, magneto-transport, optical and magneto-optical properties of quasi two-dimensionally confined charge carriers realized in metal-insulator-semiconductor (MIS) inversion or accumulation layers, heterojunctions, and multiple, isolated or coupled, quantum well structures involving III-V compound semiconductors and their alloys.

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Document Details

Document Type
Technical Report
Publication Date
May 17, 1983
Accession Number
ADA134094

Entities

People

  • A. Madhukar

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Detection
  • Electron Density
  • Electron Mobility
  • Electronics Laboratories
  • Far Infrared Lasers
  • High Electron Mobility Transistors
  • Lasers
  • Materials Science
  • Measurement
  • Metal Oxide Semiconductors
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing