Point-by-Point Matrix Effect Calibration for the Quantitative Analysis of Layered Semiconductors by Secondary Ion Mass Spectrometry.

Abstract

Point-by-point matrix effect calibration is applied to a variety of AlxGa1-xAs multilayer-multimatrix samples grown by molecular beam epitaxy. The procedure uses the linear dependence of secondary ion yields and sputtering yields on matrix composition to quantify depth profiles through matrix gradients and interfaces. The proposed method provides accurate results in the analysis of samples too complex for conventional quantitative analysis by secondary ion mass spectrometry. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 13, 1983
Accession Number
ADA134099

Entities

People

  • A. A. Galuska
  • G. H. Morrison

Organizations

  • Cornell University Department of Chemistry and Chemical Biology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Analytical Chemistry
  • Chemistry
  • Crystal Structure
  • Equations
  • Mass Spectrometry
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • New York
  • Semiconductors
  • Spectrometry
  • Standards
  • Superlattices
  • United States
  • Universities

Readers

  • Structural Health Monitoring of Composite Structures.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene