Optical Excitation of Trapping States in Fe Doped InP.

Abstract

The knowledge that defect states affect the performance and speed of semiconductors is well known. Defect and trapping states are categorized according to their sex (hole or electron trap), energy in the gap and capture cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using optical pulsing. The optical pulsing was accomplished using a simple, but efficient, infrared light emitting diode (LED). The LED had the fortunate property that with decreasing temperature, the average energy output of the LED stayed about equal to the bandgap for the III-V semiconductor InP. Because of these findings, emphasis was put on Fe-doped Inp using LED excitation. These particular samples are being studied by Naval Research Labs (NRL) in connection with lasing that results from Fe transitions. Models were set up for both the p+n junction and Fe transitions to help explain experimental results obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jun 20, 1983
Accession Number
ADA134183

Entities

People

  • Jack Giessner

Organizations

  • United States Naval Academy

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Band Gaps
  • Band Structures
  • Capacitance
  • Conduction Bands
  • Electron Emission
  • Electron Mobility
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Fermi Levels
  • Modules (Electronics)
  • Optical Lattices
  • Photoexcitation
  • Semiconductor Devices
  • Semiconductors
  • United States Naval Academy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics